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ver.2004-10-04 NJG1116BHB3 -1- 2.1ghz band lna gaas mmic general description package outline NJG1116BHB3 is a lna ic designed for 2.1ghz band w-cdma cellular phone .this ic has the function which passes lna, and high gain mode or low gain mode can be chosen. an ultra small and ultra thin package of usb8 is adopted. features low voltage operation +2.7v typ. low current consumption 2.0ma typ. @v ctl =2.7v 2ua typ. @v ctl =0v high gain 14.4db typ. @v ctl =2.7v, f rf =2140mhz low noise figure 1.5db typ. @v ctl =2.7v, f rf =2140mhz pout at 1db gain compression point -14.5dbm typ. @v ctl =2.7v, f rf =2140mhz +11.0dbm typ. @v ctl =0v, f rf =2140mhz high input ip3 -3dbm typ. @v ctl =2.7v, f rf =2140mhz +3dbm typ. @v ctl =0v, f rf =2140mhz small package usb8-b3 (package size: 1.5mmx1.5mmx0.75mm) pin configuration note: specifications and description listed in this catalog are subject to change without prior notice. NJG1116BHB3 pin connection 1.v inv 2.gnd 3.rf out 4.gnd 5.rf in 6.gnd 7. v ctl 8. gnd ( to p view ) 5 6 7 2 3 8 1 4 1 pin index
ver.2004-10-04 NJG1116BHB3 - 2 - absolute maximum ratings (t a =+25c, z s =z l =50 ? ) parameters symbol conditions ratings units operating voltage v dd 5.0 v inverter supply voltage v inv 5.0 v control voltage v ctl 5.0 v input power pin v dd =2.7v +15 dbm power dissipation p d 135 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+125 c electrical characteristics 1 (dc) (v dd =v inv =2.7v, t a =+25c, z s =z l =50 ? ) parameters symbol conditions min typ max units operating voltage v dd 2.5 2.7 4.5 v inverter supply voltage v inv 2.5 2.7 4.5 v control voltage (high) v ctl(h) 2.0 2.7 v inv+ 0.3 v control voltage (low) v ctl(l) 0 0 0.8 v operating current1 i dd1 rf off, v ctl =2.7v - 2.0 2.7 ma operating current2 i dd2 rfoff, v ctl =0v - 2 30 ua inverter current1 i inv1 rf off, v ctl =2.7v - 50 100 ua inverter current2 i inv2 rf off, v ctl =0v - 110 200 ua control current i ctl rf off, v ctl =2.7v - 20 50 ua
ver.2004-10-04 NJG1116BHB3 - 3 - electrical characteristics 2 (lna high gain mode) (v dd =v inv =2.7v, v ctl =2.7v, freq=2140mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol conditions min typ max units operating frequency freq 2110 2140 2170 mhz small signal gain1 gain1 13.2 14.4 15.7 db noise figure1 nf1 - 1.5 1.9 db pin at 1db gain compression point1 p -1db(in)1 -16.5 -14.5 - dbm input 3rd order intercept point iip3_1 f1=frf, f2=frf+100khz, pin=-36dbm -5.5 -3.0 - dbm rf input vswr1 vswr i 1 - 1.7 2.3 - rf output vswr1 vswr o 1 - 1.8 2.6 - electrical characteristics 2 (lna low gain mode) (v dd =v inv =2.7v, v ctl =0v, freq=2140mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol conditions min typ max units operating frequency freq 2110 2140 2170 mhz small signal gain2 gain2 -5.0 -4.0 -2.5 db noise figure2 nf2 - 4.0 5.0 db pin at 1db gain compression point2 p -1db(in)2 +8.0 +11.0 - dbm input 3rd order intercept point2 iip3_2 f1=frf, f2=frf+100khz, pin=-36dbm -1.0 +3.0 - dbm rf input vswr2 vswr i 2 - 2.0 2.3 - rf output vswr2 vswr o 2 - 1.5 2.0 -
ver.2004-10-04 NJG1116BHB3 - 4 - terminal infomation caution 1) ground terminal (no.2, 4, 6, 8) should be connected to the ground plane as low inductance as possible. truth table ?h?=v ctl (h), ?l?=v ctl (l) v ctl operating current bypass circuit lna mode l off on low gain mode h on off high gain mode no. symbol description 1 vinv inverter voltage supplies terminal. 2 gnd ground terminal. (0v) 3 rfout rf output terminal. the rf signal is output through external matching circuit connected to this terminal. please connected inductance l3 and power supply as shown in test circuit, since this terminal is also the terminal of lna power supply. 4 gnd ground terminal. (0v) 5 rfin rf input terminal. the rf signal is input through external matching circuit connected to this terminal. a dc blocking capacitor is not required. 6 gnd ground terminal. (0v) 7 vctl control voltage supply terminal. the high level voltage of this terminal controls lna high gain mode. the low level voltage of this terminal controls lna low gain mode. 8 gnd ground terminal. (0v)
ver.2004-10-04 NJG1116BHB3 - 5 - electrical characteristics (lna high gain mode) -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout vs. pin pout(dbm) pin(dbm) ( freq=2.14ghz, v dd =v inv =v ctl =2.7v, ta=25 o c ) p-1db(in)=-13.3dbm 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 2.05 2.1 2.15 2.2 2.25 2.3 nf vs. frequency nf(db) frequency(ghz) ( v dd =v inv =v ctl =2.7v, ta=25 o c ) nf -100 -80 -60 -40 -20 0 20 -40-35-30-25-20-15-10 -5 0 pout, im3 vs. pin pout,im3 (dbm) pin (dbm) im3 pout ( freq=2.14ghz, v dd =v inv =v ctl =2.7v, ta=25 o c ) 6 7 8 9 10 11 12 13 14 -6 -5 -4 -3 -2 -1 0 1 2 2.1 2.12 2.14 2.16 2.18 2.2 oip3, iip3 vs. frequency iip3 (dbm) oip3 (dbm) frequency(ghz) iip3 oip3 ( df=100khz, pin=-36dbm, v dd =v inv =v ctl =2.7v, ta=25 o c ) -22.0 -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 2.1 2.12 2.14 2.16 2.18 2.2 p-1db(in) vs. frequency p-1db(in) frequency(ghz) ( v dd =v inv =v ctl =2.7v, ta=25 o c ) p-1db(in) 2 4 6 8 10 12 14 16 18 -40 -35 -30 -25 -20 -15 -10 -5 0 gain vs. pin gain(db) pin(dbm) ( freq=2.14ghz, v dd =v inv =v ctl =2.7v, ta=25 o c ) p-1db(in)=-13.3dbm
ver.2004-10-04 NJG1116BHB3 - 6 - electrical characteristics (lna high gain mode) 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 22.533.544.55 oip3, iip3 vs. v dd oip3(dbm) iip3(dbm) v dd (v) ( freq=2.14+2.1401ghz, pin=-36dbm, v inv =v ctl =2.7v ) oip3 iip3 0 0.5 1 1.5 2 2.5 3 3.5 4 22.533.544.55 i dd vs. v dd v dd (v) i dd (ma) ( v inv =v ctl =2.7v, prf=off) i dd 9 10 11 12 13 14 15 16 17 0.5 1 1.5 2 2.5 3 3.5 4 4.5 22.533.544.55 gain, nf vs. v dd nf (db) gain (db) v dd (v) nf gain ( freq=2.14ghz, v inv =v ctl =2.7v ) -22 -20 -18 -16 -14 -12 -10 -8 -6 22.533.544.55 p-1db(in) vs. v dd p-1db(in)(dbm) v dd (v) p-1db(in) ( freq=2.14ghz, v inv =v ctl =2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 22.533.544.55 vswr vs. v dd vswri vswro vswri, vswro v dd (v) ( freq=2.14ghz, v inv =v ctl =2.7v )
ver.2004-10-04 NJG1116BHB3 -7- electrical characteristics (lna high gain mode) -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 -50 -25 0 25 50 75 100 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 oip3, iip3 vs. temperature ( freq=2.14+2.1401ghz, pin=-36dbm, v dd =v inv =v ctl =2.7v ) iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 -22 -20 -18 -16 -14 -12 -10 -8 -6 -50 -25 0 25 50 75 100 p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) ( freq=2.14ghz, v dd =v inv =v ctl =2.7v ) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 i dd vs. temperature i dd (ma) ambient temperature ( o c) ( v dd =v inv =v ctl =2.7v, prf=off) i dd 9 10 11 12 13 14 15 16 17 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 gain, nf vs. temperature ( freq=2.14ghz, v dd =v inv =v ctl =2.7v ) nf (db) gain (db) ambient temperature ( o c) gain nf 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c) ( freq=2.14ghz, v dd =v inv =v ctl =2.7v )
ver.2004-10-04 NJG1116BHB3 - 8 - electrical characteristics (lna high gain mode) s11, s22 s21, s12 vsw r zin, zout s11, s22 (100mhz ~ 20ghz) s21, s12 (100mhz ~ 20ghz)
ver.2004-10-04 NJG1116BHB3 - 9 - electrical characteristics (lna low gain mode) -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 20 pout vs. pin pout(dbm) pin(dbm) ( freq=2.14ghz, v dd =v inv =2.7v, v ctl =0v, ta=25 o c ) p-1db(in)=+10.5dbm 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 2 2.05 2.1 2.15 2.2 2.25 2.3 nf vs. frequency nf(db) frequency(ghz) ( v dd =v inv =2.7v, v ctl =0v, ta=25 o c ) nf -100 -80 -60 -40 -20 0 20 -40-30-20-10 0 10 pout, im3 vs. pin pout,im3 (dbm) pin (dbm) im3 pout ( freq=2.14ghz, v dd =v inv =2.7v, v ctl =0v, ta=25 o c ) -10 -8 -6 -4 -2 0 2 4 -2 0 2 4 6 8 10 12 2.1 2.12 2.14 2.16 2.18 2.2 oip3, iip3 vs. frequency iip3 (dbm) oip3 (dbm) frequency(ghz) iip3 oip3 ( df=100khz, pin=-36dbm, v dd =v inv =2.7v, v ctl =0v, ta=25 o c ) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 2.1 2.12 2.14 2.16 2.18 2.2 p-1db(in) vs. frequency p-1db(in) frequency(ghz) ( v dd =v inv =2.7v, v ctl =0v, ta=25 o c ) p-1db(in) -10 -8 -6 -4 -2 0 -40 -30 -20 -10 0 10 20 gain vs. pin gain(db) pin(dbm) ( freq=2.14ghz, v dd =v inv =2.7v, v ctl =0v, ta=25 o c ) p-1db(in)=+10.5dbm
ver.2004-10-04 NJG1116BHB3 - 1 0 - electrical characteristics (lna low gain mode) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 22.533.544.55 oip3, iip3 vs. v dd oip3(dbm) iip3(dbm) v dd (v) ( freq=2.14+2.1401ghz, pin=-20dbm, v inv =2.7v, v ctl =0v ) oip3 iip3 -10 -9 -8 -7 -6 -5 -4 -3 -2 2 3 4 5 6 7 8 9 10 22.533.544.55 gain, nf vs. v dd nf (db) gain (db) v dd (v) nf gain ( freq=2.14ghz, v inv =2.7v, v ctl =0v ) 4 6 8 10 12 14 16 18 22.533.544.55 p-1db(in) vs. v dd p-1db(in)(dbm) v dd (v) p-1db(in) ( freq=2.14ghz, v inv =2.7v, v ctl =0v ) -52 -50 -48 -46 -44 -42 -40 -38 22.533.544.55 imd3 vs. v dd imd3(dbc) v dd (v) imd3 ( freq=2.14+2.1401ghz, pin=-20dbm, v inv =2.7v, v ctl =0v ) 0 0.5 1 1.5 2 2.5 3 3.5 4 22.533.544.55 vswr vs. v dd vswri vswro vswri, vswro v dd (v) ( freq=2.14ghz, v inv =2.7v, v ctl =0v ) 0 2 4 6 8 10 22.533.544.55 i dd vs. v dd v dd (v) i dd (ua) ( v inv =2.7v, v ctl =0v, prf=off) i dd
ver.2004-10-04 NJG1116BHB3 -11- electrical characteristics (lna low gain mode) -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -50-25 0 255075100 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 oip3, iip3 vs. temperature ( freq=2.14+2.1401ghz, pin=-20dbm, v dd =v inv =2.7v, v ctl =0v) iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 4 6 8 10 12 14 16 18 -50-25 0 255075100 p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) ( freq=2.14ghz, v dd =v inv =2.7v, v ctl =0v) 0 5 10 15 20 25 30 -50-25 0 255075100 i dd (ua) ambient temperature ( o c) i dd vs. temperature ( v dd =v inv =2.7v, v ctl =0v, prf=off) i dd -10 -9 -8 -7 -6 -5 -4 -3 -2 2 3 4 5 6 7 8 9 10 -50-25 0 255075100 nf (db) gain (db) ambient temperature ( o c) gain nf gain, nf vs. temperature ( freq=2.14ghz, v dd =v inv =2.7v, v ctl =0v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c) ( freq=2.14ghz, v dd =v inv =2.7v, v ctl =0v)
ver.2004-10-04 NJG1116BHB3 - 12 - electrical characteristics (lna low gain mode) s11, s22 s21, s12 vsw r zin, zout s11, s22 (100mhz ~ 20ghz) s21, s12 (100mhz ~ 20ghz)
ver.2004-10-04 NJG1116BHB3 -1 3 - test circuit recommended pcb design parts id comment l1, l3 tdk (mlk1005) l2, l4 matushita (eljnk) c1, c2 murata (grp15) pcb (fr-4) : t=0.2mm microstrip line width =0.4mm (z 0 =50 ? ) pcb size=17.0mmx17.0mm vctl gnd rfin vinv gnd rfout 5 6 7 2 3 8 1 4 gnd gnd l1 3.9nh l2 5.1nh l3 1.8nh l4 6.8nh c1 1.5pf c2 1000pf v ctl =0v or 2.7v v inv =2.7v v dd =2.7v rf in rf out 1 pin index (top view) v inv l 4 rf in rf out v dd v ctl l1 l2 l3 c1 c2 (top view)
ver.2004-10-04 NJG1116BHB3 - 14 - package outline (usb8-b3) terminal treat :au pcb :fr5 molding material :epoxy resin unit :mm weight :4mg caution s on using thi s product this product contains gallium-arsenide (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ?

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